DUT
+
V DS
_
I SD
L
Driver
D = --------------------------
V GS
( Driver )
I SD
( DUT )
V GS
R G
Same Type
as DUT
? dv/dt controlled by R G
? I SD controlled by pulse period
Gate Pulse Width
Gate Pulse Period
I FM , Body Diode Forward Current
di/dt
V DD
10V
I RM
Body Diode Reverse Current
V DS
( DUT )
Body Diode Recovery dv/dt
V SD
V DD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
?2011 Fairchild Semiconductor Corporation
FDA38N30 Rev. C1
6
www.fairchildsemi.com
相关PDF资料
FDA59N25 MOSFET N-CH 250V 59A TO-3P
FDA59N30 MOSFET N-CH 300V 59A TO-3P
FDA69N25 MOSFET N-CH 250V 69A TO-3P
FDA70N20 MOSFET N-CH 200V 70A TO-3P
FDA8440 MOSFET N-CH 40V 100A TO-3PN
FDB024N06 MOSFET N-CH 60V 120A D2PAK
FDB029N06 MOSFET N-CH 60V 120A D2PAK
FDB031N08 MOSFET N-CH 75V 120A D2PAK
相关代理商/技术参数
FDA4100LV 制造商:STMicroelectronics 功能描述:ABD AUDIO & POWER - Trays
F-DA50A 制造商:Cosel Usa Inc 功能描述:POWER SUPPLY; DAS SERIES HEAT SINK 制造商:Cosel Usa Inc 功能描述:Optional Accessories, OP Series
F-DA50B 制造商:Cosel Usa Inc 功能描述:Optional Accessories, OP Series
F-DA50C 制造商:Cosel Usa Inc 功能描述:Optional Accessories, OP Series
F-DA50D 制造商:Cosel Usa Inc 功能描述:Optional Accessories, OP Series
FDA50N50 功能描述:MOSFET 500V NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDA50N50_12 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET
FDA50N50_NWUA002 制造商:Fairchild Semiconductor Corporation 功能描述: